Renesas Electronics Corporation has announced the development of a configurable ternary content-addressable memory (TCAM) implemented using a 3-nm FinFET manufacturing process . The new design combines increased storage density, reduced power consumption, and enhanced functional safety, positioning it for use in automotive environments . The company presented its results at the International Solid-State Circuits Conference 2026, held February 15-19 in San Francisco, California . As 5G deployments expand and cloud and edge computing workloads grow, network traffic volumes continue to rise, creating demand for larger and more flexible TCAM configurations, such as arrays with 256-bit keys and 4,096 entries .